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#1
04-13-2012, 09:09 PM
 Dritech Senior Member Join Date: Sep 2011 Posts: 513
Irf630

Hi,

What is the voltage drop between the drain and the collector of the IRF630??

I cannot see this specification listed in the datasheet.
#2
04-13-2012, 09:32 PM
 k7elp60 Senior Member Join Date: Nov 2008 Location: Utah, USA Posts: 368

I think you mean the drain and the source, as the drain is like a collector of a transistor. The difference is dependant on the drain current times the Rds(On resistance) This depends upon the gate to source voltage. The Rds is typically 0.25ohms.
#3
04-13-2012, 09:32 PM
 MrChips Super Moderator Join Date: Oct 2009 Posts: 9,274 Blog Entries: 24

IRF630 is a power MOSFET, not a bipolar junction transistor.
There is no collector, only gate, drain and source.
The drain-source ON resistance is 0.4 ohm max.
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#4
04-13-2012, 09:34 PM
 paulktreg Senior Member Join Date: Jun 2008 Location: Lancashire, UK. Posts: 380

I don't think you will find it quoted?

It does however have a RDS(on) resistance of 0.35R. If you know how much current is flowing through the device then Ohms Law will give you the voltage across it.

or is this too simplistic?

Hope that helps.
#5
04-13-2012, 09:55 PM
 Dritech Senior Member Join Date: Sep 2011 Posts: 513

Hi, thanks for the replies. Why the TIP122 and similar transistors have the 'Collector-Emitter Saturation Voltage' listed while the MOSFETs do not have?
#6
04-14-2012, 06:58 PM
 Dritech Senior Member Join Date: Sep 2011 Posts: 513

So if the current flowwing through a MOSFET with an RDS(on) resistance of 0.35R, is voltage drop is 0.35*2A = 0.7V. Is that how to determine the voltage drop?
#7
04-14-2012, 07:04 PM
 paulktreg Senior Member Join Date: Jun 2008 Location: Lancashire, UK. Posts: 380

There are a few manufacturers of the IRF630 with different quoted values for RDS(on) so check that first but your calculation sounds right to me.

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